张慧,朱晓艳,李振冲

• 1:华东师范大学物理与电子科学学院

摘要(Abstract)：

采用磁控溅射镀膜方法制备了非晶CoFeB单层膜及CoFeB/Ir Mn/Fe三层膜。利用XRD进行了物相分析和结构表征,确定了Ir Mn和Fe的生长取向以及二者的外延关系。研究单层CoFeB薄膜翻转场和剩磁比与外磁场的关系,发现其具有微弱的单轴磁各向异性。研究表明三层膜结构中的CoFeB薄膜具有不同类型的磁滞回线,包括带有偏置的矩形和两步台阶状的磁滞回线及没有偏置的两步台阶状的磁滞回线。用90°畴壁成核与位移模型可以很好地拟合三层膜结构中CoFeB层与Fe层的磁化翻转场与外加磁场的角度关系,发现CoFeB层磁各向异性的转变源于界面的交换耦合作用。

关键词(KeyWords)： CoFeB/IrMn/Fe交换偏置三层膜结构;CoFeB层;磁滞回线;交换偏置;磁化翻转;磁各向异性

Abstract:

Keywords:

基金项目(Foundation):

作者(Author): 张慧,朱晓艳,李振冲

DOI: 10.19594/j.cnki.09.19701.2021.06.002

参考文献(References)：

• [1] Johnson M T, Bloemen P J H, Broeder FJA den, et al.Magnetic anisotropy in metallic multilayers[J]. Rep Prog Phys, 1996, 59:1409-1458.
• [2] Zhan Q F, Vandezande S, Van Haesendonck C, et al.Manipulation of in-plane uniaxial anisotropy in Fe?Mg O(001)films by ion sputtering[J]. Appl Phys Lett,2007, 91:122510.
• [3] Zhang Y, Zhan Q F, Zuo Z, et al. Magnetic anisotropy and reversal in epitaxial FeGa/MgO(001)films deposited at oblique incidence[J]. IEEE Trans Magn, 2015, 51(11):1-4.
• [4] Chappert C, Fert A, Van Dau, et al. The emergence of spin electronics in data storage[J]. Nature Materials, 2007,6(11):813-823.
• [5] Phuoc N N, Xu F, Ong C K. Ultrawideband microwave noise filter:hybrid antiferromagnet/ferromagnet exchange-coupled multilayers[J]. Appl Phys Lett, 2009,94(9):167.
• [6] Pechan M J, Bennett D, Teng N, et al. Induced anisotropy and positive exchange bias:a temperature, angular, and cooling field study by ferromagnetic resonance[J]. Phys Rev B, 2002, 65(6):064410.
• [7] Arenholz E, Liu K. Angular dependence of the magnetization reversal in exchange-biased Fe?Mn F2[J].Appl Phys Lett, 2005, 87(13):132501.
• [8] Lai C H, Wang Y H, Chang C R, et al. Exchange-biasinduced double-shifted magnetization curves in Co biaxial films[J]. Phys Rev B, 2001, 64(9):115-149.
• [9] Zhang Y, Zhan Q F, Zuo Z, et al. Magnetization reversal in epitaxial exchange-biased IrMn/FeGa bilayers with anisotropy geometries controlled by oblique deposition[J].Phys Rev B, 2015, 91(17):174411.
• [10] Zhan Q F, Zhang W, Krishnan K M. Antiferromagnetic layer thickness dependence of the magnetization reversal in the epitaxial MnPd/Fe exchange bias system[J]. Phys Rev B, 2011, 83(9):625-633.
• [11] Xie Y, Zhan Q F, Hu Y, et al. Magnetocrystalline anisotropy imprinting of an antiferromagnet on an amorphous ferromagnet in FeRh/CoFeB heterostructures[J]. NPG Asia Materials, 2020, 12(1):67.
• [12] Parkin S S, Kaiser C, Panchula A, et al. Giant tunnelling magnetoresistance at room temperature with Mg O(100)tunnel barriers[J]. Nat Mater, 2004, 3(12):862-867.
• [13] Park B G, Wunderlich J, Marti X, et al. A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction[J]. Nat Mater, 2011, 10(5):347-351.
• [14] Umetsu R Y, Miyakawa M, Fukamichi K, et al. Pseudogap in the density of states and the highest Néel temperature of the L10-type Mn Ir alloy system[J]. Phys Rev B, 2004,69(10):104411.
• [15] Zhou J, Wang X, Liu Y H, et al. Large spin-orbit torque efficiency enhanced by magnetic structure of collinear antiferromagnet IrMn[J]. Sci Adv, 2019, 5:6696.
• [16] Kohn A, Kovacs A, Fan R, et al. The antiferromagnetic structures of IrMn3 and their influence on exchange-bias[J].Sci Rep, 2013, 3:2412.
• [17] Wang S G, Kohn A, Wang C, et al. Exchange bias in epitaxial Fe/Ir20Mn80 bilayers grown on Mg O(001)[J]. J Phys D:Appl Phys, 2009, 42(22):225001.
• [18] Kim C G, Rheem Y W, Kim C O, et al. Magnetostatic properties of heterogeneous Co-based amorphous/crystalline phases[J]. J Magn Magn Mater,2003, 262(3):412-419.
• [19] Zhan Q F and Krishnan K M. Angular dependence of magnetization reversal process in exchange biased epitaxial MnPd/Fe bilayers[J]. J Appl Phys, 2010, 107(9):043904.
• [20] Cowburn R P, Gray S J, Bland J, et al. Multijump magnetic switching in in-plane magnetized ultrathin epitaxial Ag/Fe/Ag(001)films[J]. Phys Rev Lett, 1997, 79(20):4018-4021.
• [21] Bruck S, Schutz G, Goering E, et al. Uncompensated moments in the MnPd/Fe exchange bias system[J]. Phys Rev Lett, 2008, 101(12):126402.

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