黄华雪,王书运,姚远,高铁军

• 1:山东师范大学物理与电子科学学院

摘要(Abstract)：

以Y_2O_3作为Ni_(81)Fe_(19)薄膜的氧化插层,利用磁控溅射法制备了一系列不同插层厚度的Ni_(81)Fe_(19)薄膜样品Ta(4nm)/Y_2O_3(t)/Ni_(81)Fe_(19)(20nm)/Y2O3(t)/Ta(3nm),利用非共线四探针法测量薄膜样品的各向异性磁电阻(AMR),用振动样品磁强计测量样品的磁滞回线,利用X射线衍射仪(XRD)分析样品薄膜结构,研究了Y_2O_3插层厚度对Ni_(81)Fe_(19)薄膜各向异性磁电阻的影响。结果表明,在基片温度为450℃时,Ni_(81)Fe_(19)薄膜AMR值随插层厚度增加先增后减,在插层厚度为2.5nm时样品具有最大AMR,其值为4.61%,比无插层样品的2.69%提高了71.3%。

关键词(KeyWords)： Ni81Fe19薄膜;各向异性磁电阻;Y2O3插层

Abstract:

Keywords:

基金项目(Foundation): 山东省自然科学基金资助项目(ZR2013EMM009)

作者(Author): 黄华雪,王书运,姚远,高铁军

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